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| TC2996A REV1_20070503 1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES * 12 W Typical Power at 1.6 GHz * 13 dB Typical Linear Power Gain at 1.6 GHz * High Linearity:IP3 = 50 dBm Typical * High Power Added Efficiency:Nominal PAE of 40 % * Suitable for High Reliability Application * Wg = 30 mm * 100 % DC and RF Tested * Flange Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5, IDS = 2.5A @ 1.6GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point Linear Power Gain Intercept Point of the 3rd-order Intermodulation, *PSCL = 28 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 MIN 39.5 12 TYP 41 13 50 40 7.5 5400 -1.7 22 1.5 MAX UNIT dBm dB dBm % A mS Volts Volts C/W * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2996A REV1_20070503 ABSOLUTE MAXIMUM RATINGS at 25 C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 35 dBm 60 W 175 C - 65 C to +175 C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2996A REV1_20070503 EVALUATION BOARD PCB Material: FR4 Ci5, 0.1uF 1206 Ci6, 10 uF +10.5 V ER = 4.6 Thickness = 31 mil Unit: mil -Vg 0805 1206 Co6, 10 uF Ci4, 1000 pF R1, 10 ohm Co5, 0.1uF T04-093_1.4ohm @1.6GHz Co4, 1000 pF Ci2, 3.9 pF Ci3, 0.75 pF RF in Ci1, 3 pF Co1, 3.9 pF Co2, 3.9 pF 0805 RF out Co3, 2 pF Part Type Resistor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Reference Designator R1 Ci1 Ci2 Ci3 Ci4 Ci5 Ci6 Co1 Co2 Co3 Co4 Co5 Co6 Description 10 ohm, 0805 3 pF, 0603 3.9 pF, 0603 0.75 pF, 0603 1000 pF, 0603 0.1 uF, 0603 10 uF, 1206 3.9 pF, 0603 3.9 pF, 0603 2 pF, 0603 1000 pF, 0603 0.1 uF, 0603 10 uF, 1206 Manufacturer Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3 |
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